PART |
Description |
Maker |
TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM(为512k字16 100万字× 8位的CMOS静态RAM)的
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Toshiba Corporation Toshiba, Corp.
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S29AL008D55TFN023 S29AL008D70TFN023 S29AL008D70TFI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 CONNECTOR ACCESSORY 连接器附 CONNECTOR ACCESSORY 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 55 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 JT 16C 16#16 PIN RECP CAP 0.015UF 50V 80-20% Z5U SMD-0805 TR-7-PL SN-NIBAR SSR OCMOS FET 200MA NO 6-SOIC
|
SPANSION LLC Spansion, Inc. Spansion Inc.
|
A29040AL-55 A29040AL-70 A29400UV-70 A2918EWH A2918 |
512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory 512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory Dual full-bridge PWM motor driver
|
AMIC Technology Allegro MicroSystems
|
29F040C-70 29F040C-90 29F040C-55 MX29F040CQI-70G M |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 4分位[12k × 8] CMOS单电5V只等于部门闪
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
V29C51000T-45P V29C51000T-45T V29C51000T-45J V29C5 |
512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 512k5536 × 85伏的CMOS闪存 512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 12k5536 × 8伏的CMOS闪存
|
Mosel Vitelic, Corp.
|
MX26LV040PC-55 MX26LV040QC-55 MX26LV040TC-55G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PQCC32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|
ADS6632A4A ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A- |
Synchronous DRAM(512K X 32 Bit X 4 Banks)
|
ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
|
M12L64322A-5BG M12L64322A-5TG M12L64322A-6BG M12L6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
M12L64322A-6BIG M12L64322A-6TIG |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
A43E06161V-95UF A43E06161 A43E06161V A43E06161V-75 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
CAT1026LI-45-GT3 CAT1026LI-45T3 CAT25C04LI-1.8TE13 |
Dual Voltage Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM 1K/2K/4K SPI Serial CMOS EEPROM 16K-Bit CMOS PARALLEL EEPROM 64K-Bit CMOS PARALLEL EEPROM 512K-Bit CMOS Flash Memory 32K/64K-Bit SPI Serial CMOS EEPROM 1 Megabit CMOS Flash Memory 512K-Bit CMOS PARALLEL EEPROM 1 Megabit CMOS Boot Block Flash Memory 256K-Bit CMOS PARALLEL EEPROM Supervisory Circuits with I2C Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer Precision, Adjustable Shunt Regulator Supervisory Circuits with I2C Serial Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer 128K/256K-Bit SPI Serial CMOS EEPROM 16K-Bit Serial EEPROM, Cascadable
|
CATALYST[Catalyst Semiconductor]
|
KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
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